| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N5161 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 182 |
2N5162 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 183 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 184 |
2N5545JAN |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 185 |
2N5545TX |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 186 |
2N5545TXV |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 187 |
2N5546JAN |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 188 |
2N5546TX |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 189 |
2N5546TXV |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 190 |
2N5547JAN |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 191 |
2N5547TX |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 192 |
2N5547TXV |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 193 |
2N665 |
PNP germanium power transistor in military and industrial equipment |
Motorola |
| 194 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 195 |
42051-125 |
12V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 196 |
42051-145 |
14V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 197 |
42051-155 |
15V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 198 |
42051-165 |
16V DC; 5A; fixed three terminal negative voltage regulator. Military and Hi Rel industrial applications where hermetically sealed product is required |
Micropac Industries |
| 199 |
4E100M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 200 |
4E100M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 201 |
4E200M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 202 |
4E200M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 203 |
4E20M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 204 |
4E20M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 205 |
4E30M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 206 |
4E30M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 207 |
4E40M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 208 |
4E40M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 209 |
4E50M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 210 |
4E50M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
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