| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 182 |
2N3325 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 183 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 184 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 185 |
2N4223 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 186 |
2N4224 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 187 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 188 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 189 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 190 |
2SA1815 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 191 |
2SA1857 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 192 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 193 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 194 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 195 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
| 196 |
2SC1394 |
TV VHF TUNER MIXER |
USHA India LTD |
| 197 |
2SC1394 |
TV VHF TUNER MIXER |
USHA India LTD |
| 198 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 199 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 200 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 201 |
2SC2347 |
Transistor Silicon NPN Epitaxial Planar Type TV UHF Oscillator Applications TV VHF Mixer Applications |
TOSHIBA |
| 202 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 203 |
2SC2353 |
Application Note - typical application for UHF TV tuner mixer |
NEC |
| 204 |
2SC2353 |
Typical Application of 2SC2353 for UHF TV Tuner Mixer |
NEC |
| 205 |
2SC2360(H) |
Si NPN planar. UHF amplifier. UNF mixer |
Panasonic |
| 206 |
2SC2714 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier Applications |
TOSHIBA |
| 207 |
2SC2756 |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
| 208 |
2SC2756R |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
| 209 |
2SC2757 |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
| 210 |
2SC2757R |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
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