| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BCR6AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 182 |
BCR6AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 183 |
BCR8CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 184 |
BCR8CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 185 |
BCR8CS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 186 |
BCR8CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 187 |
BCR8PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 188 |
BCR8PM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 189 |
BCR8PM-16 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 190 |
BCR8PM-20 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 191 |
BCR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 192 |
BFR340L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 193 |
BFR360F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators and VCO Modules up to 4 GHz |
Infineon |
| 194 |
BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz |
Infineon |
| 195 |
BFR460L3E6327 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 196 |
BFS360L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 197 |
BFS380L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package for LNA and VCO Modules up to 4GHz |
Infineon |
| 198 |
BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 199 |
BFS460L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 200 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 201 |
BFS469L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 202 |
BGD504 |
CATV power doubler amplifier modules |
Philips |
| 203 |
BGD702MI |
CATV amplifier modules |
Philips |
| 204 |
BGD802MI |
CATV amplifier modules |
Philips |
| 205 |
BGD902MI |
CATV amplifier modules |
Philips |
| 206 |
BGD902_07 |
CATV amplifier modules |
Philips |
| 207 |
BGD904MI |
CATV amplifier modules |
Philips |
| 208 |
BGD904_07 |
CATV amplifier modules |
Philips |
| 209 |
BGD906MI |
CATV amplifier modules |
Philips |
| 210 |
BGE847BO |
Optical receiver modules |
Philips |
| | | |
