| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 182 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 183 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 184 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 185 |
BlueNRG |
Bluetooth� low energy wireless network processor |
ST Microelectronics |
| 186 |
BLUENRGCSP |
Bluetooth� low energy wireless network processor |
ST Microelectronics |
| 187 |
BLUENRGQTR |
Bluetooth� low energy wireless network processor |
ST Microelectronics |
| 188 |
BT8370EPF |
single chip transceivers for T1/E1 and Integrated Service Digital Network (ISDN) primary rate interfaces |
Conexant |
| 189 |
BT8370KPF |
single chip transceivers for T1/E1 and Integrated Service Digital Network (ISDN) primary rate interfaces |
Conexant |
| 190 |
BT8375EPF |
single chip transceivers for T1/E1 and Integrated Service Digital Network (ISDN) primary rate interfaces |
Conexant |
| 191 |
BT8375KPF |
single chip transceivers for T1/E1 and Integrated Service Digital Network (ISDN) primary rate interfaces |
Conexant |
| 192 |
BT8376EPF |
single chip transceivers for T1/E1 and Integrated Service Digital Network (ISDN) primary rate interfaces |
Conexant |
| 193 |
BT8376KPF |
single chip transceivers for T1/E1 and Integrated Service Digital Network (ISDN) primary rate interfaces |
Conexant |
| 194 |
BUD42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 195 |
BUD42DT4 |
High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability |
ON Semiconductor |
| 196 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 197 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 198 |
BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 199 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 200 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 201 |
C3ENPA1-DS |
C-3e Network Processor Data Sheet Silicon Revision A1 |
Motorola |
| 202 |
C3ENPB0-DS |
C-3e Network Processor Data Sheet Silicon Revision B0 |
Motorola |
| 203 |
C5ENPA1-DS |
C-5e Network Processor Data Sheet Silicon Revision A1 |
Motorola |
| 204 |
C5ENPB0-DS |
C-5e Network Processor Data Sheet Silicon Revision B0 |
Motorola |
| 205 |
C5NPD0-DS |
C-5 Network Processor Data Sheet Silicon Revision D0 |
Motorola |
| 206 |
CC1180 |
Sub-GHz 6LoWPAN Network Processor |
Texas Instruments |
| 207 |
CC2431 |
System-on-Chip (SoC) Solution for ZigBee/IEEE 802.15.4 Wireless Sensor Network 48-VQFN -40 to 85 |
Texas Instruments |
| 208 |
CC2431RTC |
System-on-Chip (SoC) Solution for ZigBee/IEEE 802.15.4 Wireless Sensor Network 48-VQFN -40 to 85 |
Texas Instruments |
| 209 |
CC2431ZRTC |
System-on-Chip (SoC) Solution for ZigBee/IEEE 802.15.4 Wireless Sensor Network 48-VQFN -40 to 85 |
Texas Instruments |
| 210 |
CC2431ZRTCR |
System-on-Chip (SoC) Solution for ZigBee/IEEE 802.15.4 Wireless Sensor Network 48-VQFN -40 to 85 |
Texas Instruments |
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