No. |
Part Name |
Description |
Manufacturer |
181 |
1N6643U |
Signal or Computer Diode |
Microsemi |
182 |
1N6643U |
Signal or Computer Diode |
Microsemi |
183 |
1N6643US |
Signal or Computer Diode |
Microsemi |
184 |
1N6643US |
Signal or Computer Diode |
Microsemi |
185 |
1N6661 |
Signal or Computer Diode |
Microsemi |
186 |
1N6661US |
Signal or Computer Diode |
Microsemi |
187 |
1N6662 |
Signal or Computer Diode |
Microsemi |
188 |
1N6662US |
Signal or Computer Diode |
Microsemi |
189 |
1N6663 |
Signal or Computer Diode |
Microsemi |
190 |
1N6663US |
Signal or Computer Diode |
Microsemi |
191 |
1N914 |
Signal or Computer Diode |
Microsemi |
192 |
1N914 |
Signal or Computer Diode |
Microsemi |
193 |
1N914E3 |
Signal or Computer Diode |
Microsemi |
194 |
1N914URE3 |
Signal or Computer Diode |
Microsemi |
195 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
196 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
197 |
27C160 |
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |
SGS Thomson Microelectronics |
198 |
27C160 |
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |
ST Microelectronics |
199 |
27C800 |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM |
ST Microelectronics |
200 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
201 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
202 |
29F200 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory |
ST Microelectronics |
203 |
29F800 |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory |
ST Microelectronics |
204 |
2N1015 |
SIGNAL OR COMPUTER DIODE |
New Jersey Semiconductor |
205 |
2N1015A |
SIGNAL OR COMPUTER DIODE |
New Jersey Semiconductor |
206 |
2N1015B |
SIGNAL OR COMPUTER DIODE |
New Jersey Semiconductor |
207 |
2N1015C |
SIGNAL OR COMPUTER DIODE |
New Jersey Semiconductor |
208 |
2N1015D |
SIGNAL OR COMPUTER DIODE |
New Jersey Semiconductor |
209 |
2N1015E |
SIGNAL OR COMPUTER DIODE |
New Jersey Semiconductor |
210 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
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