| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BDX62A |
12A peak darlington complementary silicon power PNP transistor 90W 80V |
Motorola |
| 182 |
BDX62B |
12A peak darlington complementary silicon power PNP transistor 90W 100V |
Motorola |
| 183 |
BDX64 |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 184 |
BDX64A |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 185 |
BDX64B |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 186 |
BDX64C |
16A peak complementary darlington silicon power PNP transistor 117W |
Motorola |
| 187 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 188 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 189 |
BF316A |
Epitaxial planar PNP transistor designed for use as oscillator-mixer in TV tuners |
SGS-ATES |
| 190 |
BF479 |
RF PNP transistor for UHF-VHF applications |
IPRS Baneasa |
| 191 |
BF679S |
Epitaxial planar PNP transistor intended for use as UHF-VHF amplifier up to 900MHz |
SGS-ATES |
| 192 |
BF680 |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
| 193 |
BF680A |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
| 194 |
BF680H |
Epitaxial planar PNP transistor intended for use as UHF oscillator |
SGS-ATES |
| 195 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
| 196 |
BFQ32 |
Silicon planar epitaxial PNP transistor in a subminiature plastic transfer-moulded T-package, intended for use in UHF and microwave |
Philips |
| 197 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 198 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 199 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 200 |
BFS37 |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 201 |
BFS37A |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 202 |
BFS40 |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 203 |
BFS40A |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 204 |
BFS41 |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 205 |
BFS44 |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 206 |
BFS45 |
General purpose PNP transistor in Micro-E case |
FERRANTI |
| 207 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 208 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 209 |
BFT96 |
Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz |
SGS-ATES |
| 210 |
BSS44 |
Silicon epitaxial PNP transistor 5A |
SGS-ATES |
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