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Datasheets for RO

Datasheets found :: 14649
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 28LV256SM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
182 28LV256SM-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
183 28LV256SM-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
184 28LV256SM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
185 28LV256SM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
186 28LV256SM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
187 28LV256SM-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
188 28LV256TC-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
189 28LV256TC-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
190 28LV256TC-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
191 28LV256TC-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
192 28LV256TC-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
193 28LV256TC-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
194 28LV256TC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
195 28LV256TC-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
196 28LV256TI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
197 28LV256TI-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
198 28LV256TI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
199 28LV256TI-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
200 28LV256TI-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
201 28LV256TI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
202 28LV256TI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
203 28LV256TI-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
204 28LV256TM-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
205 28LV256TM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
206 28LV256TM-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
207 28LV256TM-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
208 28LV256TM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
209 28LV256TM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
210 28LV256TM-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC


Datasheets found :: 14649
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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