| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1SS374 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 182 |
1SS377 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 183 |
1SS378 |
Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 184 |
1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 185 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 186 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 187 |
1SS385 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 188 |
1SS385F |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 189 |
1SS387 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 190 |
1SS388 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 191 |
1SS389 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 192 |
1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 193 |
1SS392 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 194 |
1SS393 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 195 |
1SS394 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 196 |
1SS395 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 197 |
1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 198 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 199 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 200 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 201 |
1SS400T1 |
High Speed Switching Diode |
ON Semiconductor |
| 202 |
1SS401 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 203 |
1SS402 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 204 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
| 205 |
1SS92 |
(1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes |
ROHM |
| 206 |
2530 |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 207 |
2530I |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 208 |
2530N |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 209 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| 210 |
28C256AJC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
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