| No. |
Part Name |
Description |
Manufacturer |
| 181 |
5962D9960703TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 182 |
5962D9960703TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 183 |
5962D9960703TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 184 |
5962D9960703TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 185 |
5962D9960703TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 186 |
5962D9960703TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 187 |
5962D9960704QUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 188 |
5962D9960704QUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 189 |
5962D9960704QUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 190 |
5962D9960704QXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 191 |
5962D9960704QXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 192 |
5962D9960704QXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 193 |
5962D9960704TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 194 |
5962D9960704TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 195 |
5962D9960704TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 196 |
5962D9960704TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 197 |
5962D9960704TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 198 |
5962D9960704TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 199 |
5962F1120101QXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 200 |
5962F1120101VXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 201 |
5962F1120102QXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 202 |
5962F1120102VXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 203 |
5962F1120201QXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 204 |
5962F1120202QXA |
72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology |
Cypress |
| 205 |
5962F9684501QXA |
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 206 |
5962F9684501QXC |
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 207 |
5962F9684501QXX |
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 208 |
5962F9684501QYA |
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 209 |
5962F9684501QYC |
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| 210 |
5962F9684501QYX |
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
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