| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 182 |
2SC935 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Stabilized Power Supply |
Hitachi Semiconductor |
| 183 |
3NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 184 |
4NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 185 |
5M15N |
Silicon Epitaxial Planar Zener Diode for Stabilizer |
Renesas |
| 186 |
5NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 187 |
6NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 188 |
723C |
VOLTAGE STABILIZATION CIRCUIT |
VALVO |
| 189 |
7NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 190 |
8NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 191 |
AB-055 |
IMPROVE OPA541 CURRENT-LIMIT STABILITY |
Burr Brown |
| 192 |
ADXRS646 |
High Stability, Low Noise Vibration Rejecting Yaw Rate Gyroscope Data Sheet (Rev B, 01/2014) |
Analog Devices |
| 193 |
ADXRS646-EP |
High Stability, Low Noise Vibration Rejecting Yaw Rate Gyroscope Data Sheet (Rev 0, 10/2012) |
Analog Devices |
| 194 |
AN-460 |
Using transient response to determine operational amplifier stability - Application Note |
Motorola |
| 195 |
AND8199 |
THERMAL STABILITY OF MOSFETS |
ON Semiconductor |
| 196 |
BA723 |
βA723 Voltage stabilizer |
IPRS Baneasa |
| 197 |
BA723C |
βA723C Voltage stabilizer |
IPRS Baneasa |
| 198 |
BAP811 |
Dioda stabilizacyjna |
Ultra CEMI |
| 199 |
BAP812 |
Dioda stabilizacyjna |
Ultra CEMI |
| 200 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 201 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 202 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 203 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 204 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 205 |
BFR95 |
NPN resistance stabilized transistor in a TO-39 metal anvelope |
Philips |
| 206 |
BZX62A |
Silicon power Z-diode for voltage stabilization. Especially for tuner supply voltage |
AEG-TELEFUNKEN |
| 207 |
BZX62B |
Silicon power Z-diode for voltage stabilization. Especially for tuner supply voltage |
AEG-TELEFUNKEN |
| 208 |
BZX62C |
Silicon power Z-diode for voltage stabilization. Especially for tuner supply voltage |
AEG-TELEFUNKEN |
| 209 |
BZX67 |
Silicon power Z-diodes for voltage stabilization |
AEG-TELEFUNKEN |
| 210 |
BZX67C |
Silicon power Z-diodes for voltage stabilization |
AEG-TELEFUNKEN |
| | | |
