No. |
Part Name |
Description |
Manufacturer |
181 |
ATTINY26L |
2K Flash Program Memory, 160 Bytes SRAM, 128 Bytes EEPROM, 11 Channel 10-bit A/D converter. Universal Serial Interface. High Frequency PWM. Up to 8 MIPS throughput at 8 MHz. 3-volt operation |
Atmel |
182 |
ATTINY28L |
2K Flash Program Memory, 128 Bytes SRAM (+32bytes register file), Keyboard interrupt. Up to 4 MIPS throughput at 4 MHz |
Atmel |
183 |
ATTINY28V |
2K Flash Program Memory, 128 Bytes SRAM (+32bytes register file), Keyboard interrupt. Up to 1 MIPS throughput at 1 MHz. 1.8 Volt operation |
Atmel |
184 |
CA3018 |
General-Purpose Transistor Arrays from DC through the VHF range |
RCA Solid State |
185 |
CA3018A |
General-Purpose Transistor Arrays from DC through the VHF range |
RCA Solid State |
186 |
CMX589A, MX909A, MX919B, MX929B |
Increasing Data Throughput in Radio Telemetry Systems |
CONSUMER MICROCIRCUITS LIMITED |
187 |
CRS1 |
An Analog Touch Panel Controller Chip Through Serial(CRS1-656),PS/2(CRS1-685) |
etc |
188 |
DF10G7M1N |
ESD protection diode (flow through type) |
TOSHIBA |
189 |
DF6D7M1N |
ESD protection diode (flow through type) |
TOSHIBA |
190 |
DSC4501 |
Silicon NPN epitaxial planar type - For low frequency amplification - DSC2501 in NS through hole type package |
Panasonic |
191 |
DSC8505 |
Silicon NPN epitaxial planar type - For low frequency output amplification - DSC7505 in MT-2 through hole type package |
Panasonic |
192 |
DS_K7M803625B |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
193 |
EVAL-AD7731EB |
Low Noise, High Throughput 24-Bit Sigma-Delta ADC |
Analog Devices |
194 |
GB10RF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
195 |
GB10XF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package |
International Rectifier |
196 |
GB15RF120K |
1200V 18A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
197 |
GB15XF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package |
International Rectifier |
198 |
GB25RF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
199 |
GB25XF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 6Pack Package |
International Rectifier |
200 |
GB35XF120K |
1200V 35A Low Vce Non Punch Through IGBT in a Econo2 6Pack Package |
International Rectifier |
201 |
GB50XF120K |
1200V 50A Low Vce Non Punch Through IGBT in a Econo2 6Pack Package |
International Rectifier |
202 |
GS8160Z18T-133 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
203 |
GS8160Z18T-133I |
18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
204 |
GS8160Z18T-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
205 |
GS8160Z18T-150I |
18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
206 |
GS8160Z18T-166 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
207 |
GS8160Z18T-166I |
18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
208 |
GS8160Z18T-200 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
209 |
GS8160Z18T-200I |
18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
210 |
GS8160Z18T-225 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
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