| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 182 |
1N5150 |
Step-recovery power varactor diode 24W 1GHz |
Motorola |
| 183 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 184 |
1N5150A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 185 |
1N5151 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 186 |
1N5152 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 187 |
1N5152 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
| 188 |
1N5152A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 189 |
1N5153 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 190 |
1N5153 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
| 191 |
1N5153A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 192 |
1N5154 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 193 |
1N5155 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 194 |
1N5155 |
Silicon planar epitaxial varactor diode for use in multipliers up to C band |
Mullard |
| 195 |
1N5155A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 196 |
1N5156 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 197 |
1N5157 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 198 |
1N5157 |
Silicon planar epitaxial varactor diode for use in multipliers C up to X band |
Mullard |
| 199 |
1N5440 |
Diode VAR Cap Single 30V 4.7pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 200 |
1N5441 |
GENERAL PURPOSE ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 201 |
1N5441 |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 202 |
1N5441A |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 203 |
1N5441A |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 204 |
1N5441B |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 205 |
1N5441B |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 206 |
1N5441C |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 207 |
1N5441C |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 208 |
1N5441D |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 209 |
1N5442 |
GENERAL PURPOSE ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 210 |
1N5442 |
Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7 |
New Jersey Semiconductor |
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