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Datasheets for X 4 BIT

Datasheets found :: 532
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 HYB5117400BJ-60 4M x 4 Bit 2k 5 V 60 ns FPM DRAM Infineon
182 HYB5117405BJ-50 4M x 4 Bit 2k 5 V 50 ns EDO DRAM Infineon
183 HYB5117405BJ-60 4M x 4 Bit 2k 5 V 60 ns EDO DRAM Infineon
184 HYB514400BJ-50 1M x 4 Bit FPM DRAM 5 V 50 ns Infineon
185 HYB514400BJ-60 1M x 4 Bit FPM DRAM 5 V 60 ns Infineon
186 HYB514405BJ-50 1M x 4 Bit EDO DRAM 5 V 50 ns Infineon
187 HYB514405BJ-60 1M x 4 Bit EDO DRAM 5 V 60 ns Infineon
188 HYB514405BJ-70 1M x 4 Bit EDO DRAM 5 V 70 ns Infineon
189 K4E160411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
190 K4E160411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
191 K4E160412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
192 K4E160412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
193 K4E170411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
194 K4E170411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
195 K4E170412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
196 K4E170412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
197 K4E640412D-JC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. Samsung Electronic
198 K4E640412D-TC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. Samsung Electronic
199 K4E660412D-JC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. Samsung Electronic
200 K4E660412D-TC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. Samsung Electronic
201 K4F160411D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
202 K4F160411D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
203 K4F160412D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
204 K4F160412D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
205 K4F170411D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
206 K4F170411D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
207 K4F170412D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
208 K4F170412D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
209 K4F640412D-JC_L 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. Samsung Electronic
210 K4F640412D-TC_L 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. Samsung Electronic


Datasheets found :: 532
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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