No. |
Part Name |
Description |
Manufacturer |
181 |
HYB5117400BJ-60 |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM |
Infineon |
182 |
HYB5117405BJ-50 |
4M x 4 Bit 2k 5 V 50 ns EDO DRAM |
Infineon |
183 |
HYB5117405BJ-60 |
4M x 4 Bit 2k 5 V 60 ns EDO DRAM |
Infineon |
184 |
HYB514400BJ-50 |
1M x 4 Bit FPM DRAM 5 V 50 ns |
Infineon |
185 |
HYB514400BJ-60 |
1M x 4 Bit FPM DRAM 5 V 60 ns |
Infineon |
186 |
HYB514405BJ-50 |
1M x 4 Bit EDO DRAM 5 V 50 ns |
Infineon |
187 |
HYB514405BJ-60 |
1M x 4 Bit EDO DRAM 5 V 60 ns |
Infineon |
188 |
HYB514405BJ-70 |
1M x 4 Bit EDO DRAM 5 V 70 ns |
Infineon |
189 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
190 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
191 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
192 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
193 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
194 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
195 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
196 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
197 |
K4E640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
198 |
K4E640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
199 |
K4E660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
200 |
K4E660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
201 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
202 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
203 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
204 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
205 |
K4F170411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
206 |
K4F170411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
207 |
K4F170412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
208 |
K4F170412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
209 |
K4F640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
210 |
K4F640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
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