No. |
Part Name |
Description |
Manufacturer |
181 |
2N526 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
182 |
2N527 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
183 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
184 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
185 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
186 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
187 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
188 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
189 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
190 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
191 |
2N5632 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
192 |
2N5633 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
193 |
2N5634 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
194 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
195 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
196 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
197 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
198 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
199 |
2N5838 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
200 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
201 |
2N5839 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
202 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
203 |
2N5840 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
204 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
205 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
206 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
207 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
208 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
209 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
210 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
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