| No. |
Part Name |
Description |
Manufacturer |
| 181 |
Q62702-B918 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 182 |
S-80745AH-B9-S |
High-precision voltage detector |
Epson Company |
| 183 |
S-80745AH-B9-T1 |
High-precision voltage detector |
Epson Company |
| 184 |
S-80745AH-B9-T2 |
High-precision voltage detector |
Epson Company |
| 185 |
TB28F800B5-B90 |
Smart 5 boot block flash memory 8 Mbit. Access speed 90 ns |
Intel |
| 186 |
TE28F001BN-B90 |
1-Mbit(128K x 8) boot block flash memory. Access speed 90 ns |
Intel |
| 187 |
TE28F001BX-B90 |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
Intel |
| 188 |
TE28F800B5-B90 |
Smart 5 boot block flash memory 8 Mbit. Access speed 90 ns |
Intel |
| 189 |
TN28F001BN-B90 |
1-Mbit(128K x 8) boot block flash memory. Access speed 90 ns |
Intel |
| 190 |
TN28F001BX-B90 |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
Intel |
| 191 |
TP28F001BN-B90 |
1-Mbit(128K x 8) boot block flash memory. Access speed 90 ns |
Intel |
| 192 |
TP28F001BX-B90 |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
Intel |
| 193 |
UPD4616112F9-B95LX-BC2 |
16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAM |
NEC |
| | | |
