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Datasheets for -BA

Datasheets found :: 10377
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No. Part Name Description Manufacturer
181 2N5190 Epitaxial-base transistor for linear and switching applications SGS-ATES
182 2N5191 Epitaxial-base transistor for linear and switching applications SGS-ATES
183 2N5192 Epitaxial-base transistor for linear and switching applications SGS-ATES
184 2N5193 Epitaxial-base transistor for linear and switching applications SGS-ATES
185 2N5194 Epitaxial-base transistor for linear and switching applications SGS-ATES
186 2N5195 Epitaxial-base transistor for linear and switching applications SGS-ATES
187 2N5210 Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
188 2N5400 Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
189 2N5401 Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
190 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
191 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
192 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
193 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
194 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
195 2N5781 Silicon P-N-P epitaxial-base transistor. -80V, 10W. General Electric Solid State
196 2N5782 Silicon P-N-P epitaxial-base transistor. -65V, 10W. General Electric Solid State
197 2N5783 Silicon P-N-P epitaxial-base transistor. -45V, 10W. General Electric Solid State
198 2N5784 Silicon N-P-N epitaxial-base transistor. 80V, 10W. General Electric Solid State
199 2N5785 Silicon N-P-N epitaxial-base transistor. 65V, 10W. General Electric Solid State
200 2N5786 Silicon N-P-N epitaxial-base transistor. 45V, 10W. General Electric Solid State
201 2N5875 Epitaxial-base transistor for linear and switching applications SGS-ATES
202 2N5876 Epitaxial-base transistor for linear and switching applications SGS-ATES
203 2N5877 Epitaxial-base transistor for linear and switching applications SGS-ATES
204 2N5878 Epitaxial-base transistor for linear and switching applications SGS-ATES
205 2N5918 10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor RCA Solid State
206 2N5919A 16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor RCA Solid State
207 2N5920 2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor RCA Solid State
208 2N5921 5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
209 2N6034 Epitaxial-base darlington transistor for linear and switching applications SGS-ATES
210 2N6035 Epitaxial-base darlington transistor for linear and switching applications SGS-ATES


Datasheets found :: 10377
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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