No. |
Part Name |
Description |
Manufacturer |
181 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
182 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
183 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
184 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
185 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
186 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
187 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
188 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
189 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
190 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
191 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
192 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
193 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
194 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
195 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
196 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
197 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
198 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
199 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
200 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
201 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
202 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
203 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
204 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
205 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
206 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
207 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
208 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
209 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
210 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
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