| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SC5503 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 182 |
2SC5539 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 183 |
2SK1067 |
N-Channel Silicon MOSFET FM Tuner, VHF-Band Amplifier Applications |
SANYO |
| 184 |
2SK1645 |
For C to X-band Local Oscillator and Amplifier |
SANYO |
| 185 |
2SK1646 |
For C to X-band Local Oscillator and Amplifier |
SANYO |
| 186 |
2SK165 |
Si N-channel junction. Wide-band, low-noise amplifier. |
Panasonic |
| 187 |
2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER |
TOSHIBA |
| 188 |
2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications |
TOSHIBA |
| 189 |
2SK3476 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications |
TOSHIBA |
| 190 |
2SK543 |
N-Channel Silicon MOSFET FM Tuner, VHF-Band Amplifier Applications |
SANYO |
| 191 |
3134-100M |
Pulsed Power S-Band (Si) |
Microsemi |
| 192 |
3134-180P |
Pulsed Power S-Band (Si) |
Microsemi |
| 193 |
3134-200P |
Pulsed Power S-Band (Si) |
Microsemi |
| 194 |
3134-65M |
Pulsed Power S-Band (Si) |
Microsemi |
| 195 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 196 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 197 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 198 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 199 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 200 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 201 |
40608 |
Silicon NPN overlay RF Transistor, for class A wide-band CATV and MATV applications |
RCA Solid State |
| 202 |
5962-8963701CA |
High Precision, Wide-Band RMS-to-DC Converter |
Analog Devices |
| 203 |
7003 |
TRI-BAND GSM/DCS/PCS LNA |
SGS Thomson Microelectronics |
| 204 |
7003 |
TRI-BAND GSM/DCS/PCS LNA |
ST Microelectronics |
| 205 |
74CB3Q16244DGGRG4 |
16-Bit FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch 48-TSSOP -40 to 85 |
Texas Instruments |
| 206 |
74CB3Q3125DBQRE4 |
Quadruple FET 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch 16-SSOP -40 to 85 |
Texas Instruments |
| 207 |
74CB3Q3125DBQRG4 |
Quadruple FET 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch 16-SSOP -40 to 85 |
Texas Instruments |
| 208 |
74CB3Q3244DBQRE4 |
8-Bit FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch 20-SSOP -40 to 85 |
Texas Instruments |
| 209 |
74CB3Q3244RGYRG4 |
8-Bit FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch 20-VQFN -40 to 85 |
Texas Instruments |
| 210 |
74CB3Q3253DBQRG4 |
Dual 1-of-4 FET Multiplexer/Demultiplexer 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch 16-SSOP -40 to 85 |
Texas Instruments |
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