| No. |
Part Name |
Description |
Manufacturer |
| 181 |
AOTF280A60L |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 182 |
AOTF409 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 183 |
AOTF4185 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 184 |
AOTF600A60L |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 185 |
AOTF66920L |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 186 |
AOUS66920 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 187 |
AOWF600A70F |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 188 |
AOY423 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 189 |
AOY66920 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 190 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 191 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 192 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 193 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 194 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 195 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 196 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 197 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 198 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 199 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 200 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 201 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 202 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 203 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 204 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 205 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 206 |
BF987 |
Silicon N-Channel MOSFET Triode |
Infineon |
| 207 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 208 |
BF998W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 209 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 210 |
BF999 |
Silicon N-Channel MOSFET Triode |
Infineon |
| | | |
