| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BCX59 |
NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 182 |
BCX59IX |
NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 183 |
BCX59VIII |
NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 184 |
BCX59X |
NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 185 |
BCX78 |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 186 |
BCX78-IX |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 187 |
BCX78-VII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 188 |
BCX78-VIII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 189 |
BCX78-X |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 190 |
BCX79 |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 191 |
BCX79-IX |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 192 |
BCX79-VII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 193 |
BCX79-VIII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 194 |
BCX79-X |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
| 195 |
BF120 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage (in german) |
ITT Semiconductors |
| 196 |
BF421 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 197 |
BF423 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 198 |
BF622 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 199 |
BF623 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 200 |
BFP22 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 201 |
BFP23 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 202 |
BFP25 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 203 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
| 204 |
BFR64 |
NPN silicon multi-emitter transistor in a capstan envelope |
Philips |
| 205 |
BFR65 |
NPN multi-emitter silicon transistor in a capstan envelope |
Philips |
| 206 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 207 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 208 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 209 |
BFW16A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 210 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
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