| No. |
Part Name |
Description |
Manufacturer |
| 181 |
QTLP652CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright 1206 (Reverse Mount) |
Fairchild Semiconductor |
| 182 |
QTLP660CAGTR |
Yellow-Green Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 183 |
QTLP660CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 184 |
QTLP670CAGTR |
Yellow-Green Surface Mount LED Lamp - Super Bright PLCC-2 |
Fairchild Semiconductor |
| 185 |
QTLP670CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright PLCC-2 |
Fairchild Semiconductor |
| 186 |
QTLP670CRAGTR |
Red / Yellow-Green Surface Mount LED Lamp - Super Bright PLCC-4 |
Fairchild Semiconductor |
| 187 |
S5444 |
Excess 3-Gray-to-decimal decoder |
Signetics |
| 188 |
S5444B |
Excess 3-Gray-to-decimal decoder |
Signetics |
| 189 |
S5444W |
Excess 3-Gray-to-decimal decoder |
Signetics |
| 190 |
SLP-3117E-51 |
Infrared LED �3.1mm yellow-green contact type LED lamp ((U-cut version) |
SANYO |
| 191 |
SLP-3130C-81 |
Infrared LED �5mm yelloe-green contact type LED lamp |
SANYO |
| 192 |
SLP-3131C-81 |
�5mm yellow-green contact type LED lamp |
SANYO |
| 193 |
SLP-3132C-81 |
�5mm yellow-green |
SANYO |
| 194 |
STB18NF30 |
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package |
ST Microelectronics |
| 195 |
STB36NM60N |
Automotive-grade N-channel 600 V, 0.092 Ohm typ., 29 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 196 |
STB36NM60ND |
Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
| 197 |
STB46N30M5 |
Automotive-grade N-channel 300 V, 0.037 Ohm typ., 53 A MDmesh(TM) V Power MOSFET in a D2PAK Package |
ST Microelectronics |
| 198 |
STB9NK80Z |
Automotive-grade N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 199 |
STD10NF30 |
Automotive-grade N-channel 300 V, 0.28 Ohm typ., 10 A MESH OVERLAY(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
| 200 |
STD80N4F6 |
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 201 |
STD80N6F6 |
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
| 202 |
STGB20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 203 |
STGB35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 204 |
STGB35N35LZ-1 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 205 |
STGB35N35LZT4 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 206 |
STGD10HF60KD |
Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode |
ST Microelectronics |
| 207 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
| 208 |
STGD20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 209 |
STGP35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 210 |
STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package |
ST Microelectronics |
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