| No. |
Part Name |
Description |
Manufacturer |
| 181 |
Q62702-P941 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 182 |
Q62702-P957 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 183 |
Q62702-P997 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 184 |
Q62702-P998 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 185 |
Q62702-P999 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 186 |
SFH300 |
.NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 187 |
SFH302 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 188 |
SFH303 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 189 |
SFH305 |
Mini-Silicon NPN Phototransistor |
Siemens |
| 190 |
SFH305-2 |
Mini-silicon NPN phototransistor |
Siemens |
| 191 |
SFH305-3 |
Mini-silicon NPN phototransistor |
Siemens |
| 192 |
SFH309 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 193 |
SFH309P |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 194 |
SFH310 |
Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor |
Siemens |
| 195 |
SFH313 |
.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor |
Siemens |
| 196 |
SFH314 |
.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor |
Siemens |
| 197 |
SFH320 |
NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package |
Siemens |
| 198 |
SFH325 |
NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package |
Siemens |
| 199 |
SFH3400 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 200 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 201 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 202 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 203 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 204 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 205 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 206 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 207 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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