| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BCR199F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 182 |
BCR199T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
| 183 |
BCW61 |
Low-Noise-Transistors - SOT23 |
Infineon |
| 184 |
BDL31 |
NPN BISS-transistor |
Philips |
| 185 |
BDL32 |
PNP BISS-transistor |
Philips |
| 186 |
BFS360L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 187 |
BFS380L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package for LNA and VCO Modules up to 4GHz |
Infineon |
| 188 |
BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 189 |
BSC022N03 |
OptiMOS2 Power-Transistor |
Infineon |
| 190 |
BSC094N03SG |
OptiMOS2 Power-Transistor |
Infineon |
| 191 |
BSC119N03SG |
OptiMOS2 Power-Transistor |
Infineon |
| 192 |
BSL211 |
OptiMOS -P Small-Signal-Transistor |
Infineon |
| 193 |
BSO-302SN |
SIPMOS Small-Signal-Transistor |
Infineon |
| 194 |
BSO301 |
OptiMOS -P Small-Signal-Transistor |
Infineon |
| 195 |
BSO303 |
OptiMOS -P Small-Signal-Transistor |
Infineon |
| 196 |
BSO615 |
SIPMOS Small-Signal-Transistor |
Infineon |
| 197 |
BSP125 |
SIPMOS Power-Transistor |
Infineon |
| 198 |
BSP320 |
SIPMOS Small-Signal-Transistor |
Infineon |
| 199 |
BSP324 |
SIPMOS Power-Transistor |
Infineon |
| 200 |
BSS7728 |
SIPMOS Small-Signal-Transistor |
Infineon |
| 201 |
BSS83 |
SIPMOS Small-Signal-Transistor |
Infineon |
| 202 |
CNY17-2 |
Photocoupler GaAs Ired & Photo-Transistor |
TOSHIBA |
| 203 |
CNY17-3 |
Photocoupler GaAs Ired & Photo-Transistor |
TOSHIBA |
| 204 |
CNY17-4 |
Photocoupler GaAs Ired & Photo-Transistor |
TOSHIBA |
| 205 |
CPT-182 |
Surface Mountable Chip Photo-transistor CPT-182 Series |
Unknow |
| 206 |
CPT-230 |
Surface Mountable Chip Photo-transistor CPT-230 Series |
Unknow |
| 207 |
CQY13 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 208 |
CQY23 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 209 |
CYN17-4 |
IRED & PHOTO-TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR) |
TOSHIBA |
| 210 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
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