| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SK2090-T1 |
N-channel MOS-type silicon field effect transistor |
NEC |
| 182 |
2SK2090-T2 |
N-channel MOS-type silicon field effect transistor |
NEC |
| 183 |
2SK334 |
Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES |
SANYO |
| 184 |
3970 |
3970-Type 1550 nm Transmitter |
Agere Systems |
| 185 |
3970-TYPE |
1550 nm transmitter. Connector options: FC/APC bulkhead, tight key;SC/APC bulkhead; E-2000/APC bulkhead. |
Agere Systems |
| 186 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 187 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 188 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 189 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 190 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 191 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 192 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 193 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 194 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 195 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 196 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 197 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 198 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 199 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 200 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 201 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 202 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 203 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 204 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 205 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 206 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 207 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 208 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 209 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 210 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
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