No. |
Part Name |
Description |
Manufacturer |
181 |
2N4240 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
182 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
183 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
184 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
185 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
186 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
187 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
188 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
189 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
190 |
2N4928 |
High-voltage PNP silicon annular transistor, TO-39 case |
Motorola |
191 |
2N4929 |
High-voltage PNP silicon annular transistor, TO-39 case |
Motorola |
192 |
2N4930 |
High-voltage PNP silicon annular transistor, TO-39 case |
Motorola |
193 |
2N4931 |
High-voltage PNP silicon annular transistor, TO-39 case |
Motorola |
194 |
2N5189 |
High-Voltage Silicon NPN Switching Transistor |
RCA Solid State |
195 |
2N5239 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
196 |
2N5240 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
197 |
2N5344 |
High-voltage PNP silicon transistor, TO-66 case |
Motorola |
198 |
2N5345 |
High-voltage PNP silicon transistor, TO-66 case |
Motorola |
199 |
2N5401 |
PNP high-voltage transistor |
Philips |
200 |
2N5415 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
201 |
2N5415 |
PNP high-voltage transistors |
Philips |
202 |
2N5415S |
HIGH-VOLTAGE AMPLIFIER |
SGS Thomson Microelectronics |
203 |
2N5415S |
HIGH-VOLTAGE AMPLIFIER |
ST Microelectronics |
204 |
2N5416 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
205 |
2N5416 |
PNP high-voltage transistors |
Philips |
206 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
207 |
2N5550 |
NPN high-voltage transistors |
Philips |
208 |
2N5551 |
NPN high-voltage transistors |
Philips |
209 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
210 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
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