| No. |
Part Name |
Description |
Manufacturer |
| 181 |
LND823 |
Power MOSFET, Vdss = 450V - 500V, Rds(on) = 3.0 ohm - 4.0 ohm, Id = 2.2A and 2.5A |
LinearDimensions |
| 182 |
M9130 |
6A / -100V / 0.550 Ohm / Rad Hard / P-Channel Power MOSFETs |
Intersil |
| 183 |
N74F3038D |
Quad 2-input NAND 30 ohm line driver open collector |
Philips |
| 184 |
N74F3038N |
Quad 2-input NAND 30 ohm line driver open collector |
Philips |
| 185 |
N74F3040D |
Dual 4-input NAND 30 ohm line driver |
Philips |
| 186 |
N74F3040N |
Dual 4-input NAND 30 ohm line driver |
Philips |
| 187 |
NDF08N50Z |
Power MOSFET 500V 0.850 Ohm Single N-Channel |
ON Semiconductor |
| 188 |
NDF10N62Z |
Power MOSFET 620V 0.750 Ohm Single N-Channel |
ON Semiconductor |
| 189 |
NGA-186 |
DC-6000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. 12.0dB gain, 14.7 dBmP1dB at 1950MHz. |
Stanford Microdevices |
| 190 |
NGA-286 |
DC-6000 MHz, cascadable 50 ohm (1.3:1 VSWR) GaAs HBT MMIC amplifier. High gain: 14.8 at 1950MHz. |
Stanford Microdevices |
| 191 |
NGA-386 |
DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz. |
Stanford Microdevices |
| 192 |
NGA-489 |
0.5-10 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 14.5 dB at 1950MHz. |
Stanford Microdevices |
| 193 |
NGA-589 |
DC-5.5 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 19.2 dB at 1950MHz. |
Stanford Microdevices |
| 194 |
NGA-686 |
DC-6000 MHz, cascadable 50 ohm GaAs HBT MMIC amplifier. 11.4dB gain, 19.2 dBm P1dB at 1950MHz. |
Stanford Microdevices |
| 195 |
NLAS4783B |
Analog Switch, Triple SPDT, 1.0 Ohm RON |
ON Semiconductor |
| 196 |
PE4302 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
| 197 |
PE4302-00 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
| 198 |
PE4302-01 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
| 199 |
PE4302-02 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
| 200 |
PE4302-51 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
| 201 |
PE4302-52 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
| 202 |
PE4302DS |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
| 203 |
QPA9124 |
3.0 - 5.0 GHz 100 Ohm Differential Output Gain Block |
Qorvo |
| 204 |
QPA9143 |
2.3 - 3.8 GHz 100 Ohm Differential Input Gain Block |
Qorvo |
| 205 |
QPA9154 |
2.3 - 3.8 GHz 100 Ohm Differential Output Gain Block |
Qorvo |
| 206 |
RF1S40N10SM9A |
Discrete Commercial N-Channel Power MOSFET, 100V, 40A, 0.040 OHM @ Vgs=10V, TO-263 |
Fairchild Semiconductor |
| 207 |
RFL1N10 |
1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 208 |
RFL1N10L |
1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 209 |
RFL1N15 |
1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 210 |
RFL1N15L |
1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
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