| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N4783A |
Low-level temperature-compensated zener reference diode. Max voltage 0.013 V. |
Motorola |
| 182 |
1N4784 |
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V. |
Motorola |
| 183 |
1N4784A |
Low-level temperature-compensated zener reference diode. Max voltage 0.007 V. |
Motorola |
| 184 |
1N5231BLCC3 |
5.1V, 0.02A Reference diode |
SemeLAB |
| 185 |
1N5240 |
500 mW silicon zener diode. Nominal zener voltage 10.0 V. |
Fairchild Semiconductor |
| 186 |
1N5240B |
10.0V 500 mW Zener Diode |
Continental Device India Limited |
| 187 |
1N5250 |
500 mW silicon zener diode. Nominal zener voltage 20.0 V. |
Fairchild Semiconductor |
| 188 |
1N5250B |
20.0V 500 mW Zener Diode |
Continental Device India Limited |
| 189 |
1N5256 |
500 mW silicon zener diode. Nominal zener voltage 30.0 V. |
Fairchild Semiconductor |
| 190 |
1N5256B |
30.0V 500 mW Zener Diode |
Continental Device India Limited |
| 191 |
1N5324 |
Rectifier Diode 15000V 0.01A |
Motorola |
| 192 |
1N5530A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 193 |
1N5530B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 194 |
1N5540A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 195 |
1N5540B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 196 |
1N5545A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 197 |
1N5545B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 198 |
1N5711 |
Diode Schottky 70V 0.015A 2-Pin DO-35 |
New Jersey Semiconductor |
| 199 |
1N5712 |
Diode Schottky 20V 0.075A 2-Pin DO-35 |
New Jersey Semiconductor |
| 200 |
1N5736B |
10.0V Voltage Reference Diode |
Philips |
| 201 |
1N5743B |
20.0V Voltage Reference Diode |
Philips |
| 202 |
1N5747B |
30.0V Voltage Reference Diode |
Philips |
| 203 |
1N590 |
Silicon Rectifier Diode 1500V 0.075A |
Motorola |
| 204 |
1N591 |
Silicon Rectifier Diode 1500V 0.075A |
Motorola |
| 205 |
1N60A |
Diode 45V 0.05A 2-Pin DO-7 |
New Jersey Semiconductor |
| 206 |
1N60BDO7 |
Diode Schottky 40V 0.03A 2-Pin DO-35 Bulk |
New Jersey Semiconductor |
| 207 |
1N61 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 208 |
1N615 |
Germanium Rectifier Diode 300V 0.075A |
Motorola |
| 209 |
1N63 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 210 |
1N6375 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| | | |
