| No. |
Part Name |
Description |
Manufacturer |
| 181 |
NX8570SC602-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1560.200 nm. Frequency 192.15 THz. FC-PC connector. |
NEC |
| 182 |
NX8570SC602-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1560.200 nm. Frequency 192.15 THz. SC-PC connector. |
NEC |
| 183 |
NX8571SC602-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1560.200 nm. Frequency 192.15 THz. FC-PC connector. |
NEC |
| 184 |
NX8571SC602-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1560.200 nm. Frequency 192.15 THz. SC-PC connector. |
NEC |
| 185 |
RF1S9540SM |
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 186 |
RFD10P03 |
10A/ 30V/ 0.200W/ Logic Level P-Channel Power MOSFET |
Fairchild Semiconductor |
| 187 |
RFD10P03L |
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET |
Fairchild Semiconductor |
| 188 |
RFD10P03L |
10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET |
Intersil |
| 189 |
RFD10P03LSM |
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET |
Fairchild Semiconductor |
| 190 |
RFD10P03LSM |
10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET |
Intersil |
| 191 |
RFM12N08 |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 192 |
RFM12N10 |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 193 |
RFP10P03L |
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET |
Fairchild Semiconductor |
| 194 |
RFP10P03L |
10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET |
Intersil |
| 195 |
RFP12N08 |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 196 |
RFP12N10 |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 197 |
RFP12N10L |
12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 198 |
RFP12N10L |
12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET |
Intersil |
| 199 |
STB20NM50 |
N-CHANNEL 500V 0.20 OHM 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 200 |
STB20NM50 |
N-CHANNEL 500V - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET |
ST Microelectronics |
| 201 |
STB20NM50-1 |
N-CHANNEL 500V 0.20 OHM 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 202 |
STB20NM50-1 |
N-CHANNEL 500V - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET |
ST Microelectronics |
| 203 |
STB20NM50FD |
N-CHANNEL 500V 0.20 OHM 20A D2PAK FDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 204 |
STB20NM50FD |
N-CHANNEL 500V 0.20 OHM 20A D2PAK FDMESH POWER MOSFET |
ST Microelectronics |
| 205 |
STB20NM50T4 |
N-CHANNEL 550V @ Tjmax - 0.20 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH MOSFET |
ST Microelectronics |
| 206 |
STE34NK80Z |
N-CHANNEL 800V - 0.20 OHM - 32A ISOTOP ZENER-PROTECTED SUPERMESH™POWER MOSFET |
ST Microelectronics |
| 207 |
STL10DN15F3 |
N-channel 150 V, 0.20 Ohm typ., 2.8 A STripFET(TM) III Power MOSFET in a PowerFLAT(TM) 5x6 double island package |
ST Microelectronics |
| 208 |
STL18N55M5 |
N-channel 550 V, 0.205 Ohm typ., 13 A MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 209 |
STL24NM60N |
N-channel 600 V, 0.200 Ohm typ., 16 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 210 |
STP20NM50 |
N-CHANNEL 500V 0.20 OHM 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
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