No. |
Part Name |
Description |
Manufacturer |
181 |
2722 162 05271 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
182 |
2722 162 05311 |
Circulators/Isolators 1700 to 2100 MHz |
Philips |
183 |
2722 162 05341 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
184 |
2722 162 05351 |
Circulators/Isolators 2100 to 2500 MHz |
Philips |
185 |
2722 162 05361 |
Circulators/Isolators 2300 to 2700 MHz |
Philips |
186 |
2722 162 05411 |
Circulators/Isolators 2000 to 2700 MHz |
Philips |
187 |
2722 162 05471 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
188 |
2722 162 05781 |
VHF/UHF Broadband Circulators/Isolators, frequency range 225 to 400 MHz |
Philips |
189 |
28-FEB |
10 TO 1000 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
190 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
191 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
192 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
193 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
194 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
195 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
196 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
197 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
198 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
199 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
200 |
2N6198 |
12 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
201 |
2N6199 |
25 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
202 |
2N6200 |
B40-28 40 WATTS - 28 VOLTS 100-200 MHZ |
Acrian |
203 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
204 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
205 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
206 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
207 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
208 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
209 |
2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
210 |
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
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