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Datasheets for 00 MH

Datasheets found :: 4163
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No. Part Name Description Manufacturer
181 2722 162 05271 Circulators/Isolators 1900 to 2300 MHz Philips
182 2722 162 05311 Circulators/Isolators 1700 to 2100 MHz Philips
183 2722 162 05341 Circulators/Isolators 1900 to 2300 MHz Philips
184 2722 162 05351 Circulators/Isolators 2100 to 2500 MHz Philips
185 2722 162 05361 Circulators/Isolators 2300 to 2700 MHz Philips
186 2722 162 05411 Circulators/Isolators 2000 to 2700 MHz Philips
187 2722 162 05471 Circulators/Isolators 1900 to 2300 MHz Philips
188 2722 162 05781 VHF/UHF Broadband Circulators/Isolators, frequency range 225 to 400 MHz Philips
189 28-FEB 10 TO 1000 MHz CASCADABLE AMPLIFIER Tyco Electronics
190 2N3295 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
191 2N3296 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
192 2N3297 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
193 2N3866 Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage VALVO
194 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
195 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
196 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
197 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
198 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
199 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
200 2N6198 12 W, 28 V, 100-200 MHz, VHF communication Acrian
201 2N6199 25 W, 28 V, 100-200 MHz, VHF communication Acrian
202 2N6200 B40-28 40 WATTS - 28 VOLTS 100-200 MHZ Acrian
203 2N6439 60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON Motorola
204 2N918 hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W SGS Thomson Microelectronics
205 2SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS SGS Thomson Microelectronics
206 2SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS ST Microelectronics
207 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION NEC
208 2SK3077 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) TOSHIBA
209 2SK3078 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) TOSHIBA
210 2SK3079 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) TOSHIBA


Datasheets found :: 4163
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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