No. |
Part Name |
Description |
Manufacturer |
181 |
DSC1124BE2-100.0000T |
Clock and Timing - Oscillators |
Microchip |
182 |
DSC1124BI1-100.0000 |
Clock and Timing - Oscillators |
Microchip |
183 |
DSC1124BI1-100.0000T |
Clock and Timing - Oscillators |
Microchip |
184 |
DSC1124BI2-100.0000 |
Clock and Timing - Oscillators |
Microchip |
185 |
DSC1124BI2-100.0000T |
Clock and Timing - Oscillators |
Microchip |
186 |
DSC1124BI5-100.0000 |
Clock and Timing - Oscillators |
Microchip |
187 |
DSC1124BI5-100.0000T |
Clock and Timing - Oscillators |
Microchip |
188 |
DSC1124CI2-100.0000 |
Clock and Timing - Oscillators |
Microchip |
189 |
DSC1124CI2-100.0000T |
Clock and Timing - Oscillators |
Microchip |
190 |
DSC1124CI2-200.0000 |
Clock and Timing - Oscillators |
Microchip |
191 |
DSC1124CI2-200.0000T |
Clock and Timing - Oscillators |
Microchip |
192 |
DSC1124CI5-100.0000 |
Clock and Timing - Oscillators |
Microchip |
193 |
DSC1124CI5-100.0000T |
Clock and Timing - Oscillators |
Microchip |
194 |
DSC1124CL2-100.0000 |
Clock and Timing - Oscillators |
Microchip |
195 |
DSC1124CL2-100.0000T |
Clock and Timing - Oscillators |
Microchip |
196 |
DSC1124CL2-200.0000 |
Clock and Timing - Oscillators |
Microchip |
197 |
DSC1124CL2-200.0000T |
Clock and Timing - Oscillators |
Microchip |
198 |
DSC1124NE1-100.0000 |
Clock and Timing - Oscillators |
Microchip |
199 |
DSC1124NE1-100.0000T |
Clock and Timing - Oscillators |
Microchip |
200 |
DSC1124NI1-100.0000 |
Clock and Timing - Oscillators |
Microchip |
201 |
DSC1124NI1-100.0000T |
Clock and Timing - Oscillators |
Microchip |
202 |
DSC1124NL2-100.0000T |
Clock and Timing - Oscillators |
Microchip |
203 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
204 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
205 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
206 |
MAX40-100.0CA |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
207 |
P4KE350A |
300.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
208 |
P4KE350A-T3 |
Reverse stand-off voltage: 300.00V transient voltage suppressor |
Won-Top Electronics |
209 |
P4KE350A-TB |
Reverse stand-off voltage: 300.00V transient voltage suppressor |
Won-Top Electronics |
210 |
P4KE350CA |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 300.00 V. Test current IT = 1 mA. |
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