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Datasheets for 00MA

Datasheets found :: 19595
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No. Part Name Description Manufacturer
181 2N4125 Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. General Electric Solid State
182 2N4126 Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. General Electric Solid State
183 2N4400 Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. General Electric Solid State
184 2N4401 Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. General Electric Solid State
185 2N4402 Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. General Electric Solid State
186 2N4403 Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. General Electric Solid State
187 2N4424 Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. General Electric Solid State
188 2N5172 NPN silicon transistor. 25V, 100mA. General Electric Solid State
189 2N5232 Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
190 2N5232A Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
191 2N5249 Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
192 2N5249A Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
193 2N5306 Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. General Electric Solid State
194 2N5307 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
195 2N5308 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
196 2N5308A Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
197 2N5366 Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. General Electric Solid State
198 2N5432 Trans JFET N-CH 400mA 3-Pin TO-52 New Jersey Semiconductor
199 2N5433 Trans JFET N-CH 400mA 3-Pin TO-52 New Jersey Semiconductor
200 2N5583 PNP silicon high frequency transistor 1.3GHz - 100mAdc Motorola
201 2N5837 NPN silicon high frequency transistor 1.7GHz - 100mAdc Motorola
202 2N6076 PNP silicon transistor. 25V, 100mA. General Electric Solid State
203 2N6515 Ic=500mA, Vce=10V transistor MCC
204 2N6517 Ic=500mA, Vce=10V transistor MCC
205 2N6519 Ic=500mA, Vce=10V transistor MCC
206 2N6520 Ic=500mA, Vce=10V transistor MCC
207 2SA1235A 200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 Isahaya Electronics Corporation
208 2SA1248 160V/700mA Switching Applications SANYO
209 2SA1284 900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 Isahaya Electronics Corporation
210 2SA1366 150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 Isahaya Electronics Corporation


Datasheets found :: 19595
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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