| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1S103 |
Diffused silicon rectifier 750mA 400V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
| 182 |
1S105 |
Diffused silicon rectifier 750mA 600V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
| 183 |
1S107 |
Diffused silicon rectifier 750mA 800V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
| 184 |
1S109 |
Diffused silicon rectifier 750mA 1000V, approved for military use, available under CV7026 to CV7030 |
Texas Instruments |
| 185 |
1S131 |
Diffused silicon diode 100V, color code brown-orange-brown |
Texas Instruments |
| 186 |
1S132 |
Diffused silicon diode 200V, color code brown-orange-red |
Texas Instruments |
| 187 |
1S134 |
Diffused silicon diode 400V, color code brown-orange-yellow |
Texas Instruments |
| 188 |
1S136 |
Diffused silicon diode 600V, color code brown-orange-blue |
Texas Instruments |
| 189 |
1S138 |
Diffused silicon diode 800V, color code brown-orange-gray |
Texas Instruments |
| 190 |
1S1644R |
Silicon diffused junction rectifier 50A 300V, reverse polarity |
TOSHIBA |
| 191 |
1S1646R |
Silicon diffused junction rectifier 100A 300V, reverse polarity |
TOSHIBA |
| 192 |
1S3100A |
1W Zener diode 100V, ±5% tolerance |
Texas Instruments |
| 193 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 194 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 195 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 196 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 197 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 198 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 199 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 200 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 201 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 202 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 203 |
1S3200A |
1W Zener diode 200V, ±5% tolerance |
Texas Instruments |
| 204 |
1S410R |
Diffused silicon rectifier 3A 100V, reverse polarity |
Texas Instruments |
| 205 |
1S411R |
Diffused silicon rectifier 3A 200V, reverse polarity |
Texas Instruments |
| 206 |
1S413R |
Diffused silicon rectifier 3A 400V, reverse polarity |
Texas Instruments |
| 207 |
1S415R |
Diffused silicon rectifier 3A 600V, reverse polarity |
Texas Instruments |
| 208 |
1S417R |
Diffused silicon rectifier 3A 800V, reverse polarity |
Texas Instruments |
| 209 |
1S419R |
Diffused silicon rectifier 3A 1000V, reverse polarity |
Texas Instruments |
| 210 |
1S420R |
Diffused silicon rectifier 10A 100V, reverse polarity |
Texas Instruments |
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