| No. |
Part Name |
Description |
Manufacturer |
| 181 |
28C011TRT4FI20 |
1 megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
| 182 |
28C011TRT4FS12 |
1 megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
| 183 |
28C011TRT4FS15 |
1 megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
| 184 |
28C011TRT4FS20 |
1 megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
| 185 |
2C2857 |
Chip Type 2C2857 Geometry 0011 Polarity NPN |
Semicoa Semiconductor |
| 186 |
2N1011 |
PNP germanium power transistor, for military and industrial equipment |
Motorola |
| 187 |
2N1011 |
Germanium PNP Transistor |
Motorola |
| 188 |
2N2011 |
THYRISTOR |
Motorola |
| 189 |
2N2857 |
Type 2N2857 Geometry 0011 Polarity NPN |
Semicoa Semiconductor |
| 190 |
2N2857UB |
Chip Type 2C2857 Geometry 0011 Polarity NPN |
Semicoa Semiconductor |
| 191 |
2N3011 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 192 |
2N3011 |
High-Speed NPN Silicon saturated Switching Transistor |
ITT Semiconductors |
| 193 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 194 |
2N3011 |
Silicon NPN Transistor |
Motorola |
| 195 |
2N3011 |
NPN switching transistor |
National Semiconductor |
| 196 |
2N3011 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 197 |
2N4011 |
Transistor |
Motorola |
| 198 |
2N5011 |
NPN Transistor |
Microsemi |
| 199 |
2N5011 |
Silicon NPN Transistor |
Motorola |
| 200 |
2N5011 |
Bipolar NPN Device |
SemeLAB |
| 201 |
2N5011 |
Silicon NPN Power Transistor, TO-5 package |
Silicon Transistor Corporation |
| 202 |
2PG011 |
Silicon N-channel enhancement IGBT |
Panasonic |
| 203 |
2SA1011 |
POWER TRANSISTORS(1.5A,160V,25W) |
MOSPEC Semiconductor |
| 204 |
2SA1011 |
Trans GP BJT PNP 160V 1.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 205 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 206 |
2SA1011 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 207 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 208 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 209 |
2SA2011 |
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications |
SANYO |
| 210 |
2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| | | |
