| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6050 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 182 |
2N6050 |
60V power complementary silicon transistor |
Comset Semiconductors |
| 183 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
| 184 |
2N6050 |
POWER TRANSISTORS(12A,150W) |
MOSPEC Semiconductor |
| 185 |
2N6050 |
12A Darlington complementary silicon power PNP Transistor 150W |
Motorola |
| 186 |
2N6050 |
Trans Darlington PNP 60V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 187 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 188 |
2N6050 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6057 |
Silicon Transistor Corporation |
| 189 |
2N6057 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6050 |
Silicon Transistor Corporation |
| 190 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
| 191 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 192 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 193 |
2SA1050 |
Trans GP BJT PNP 30V 0.1A 3-Pin MPAK |
New Jersey Semiconductor |
| 194 |
2SA1050 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
| 195 |
2SB1050 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 196 |
2SC1050 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 197 |
2SC1050 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 198 |
2SC2050 |
2SC2050 |
Unknow |
| 199 |
2SC2050 |
2SC2050 |
Unknow |
| 200 |
2SC4050 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 201 |
2SC4050 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 202 |
2SC4050 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 203 |
2SC5050 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 204 |
2SC5050 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 205 |
2SC5050 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 206 |
2SC6050 |
Silicon NPN epitaxial planar type |
Panasonic |
| 207 |
2SD2050 |
NPN Triple Diffused Planar Silicon Transistor Driver Applications |
SANYO |
| 208 |
2SK2050 |
N-channel MOS-FET |
Fuji Electric |
| 209 |
2V050 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 82 V @ 1mA DC test current. |
NTE Electronics |
| 210 |
30050-33 |
Geode GXm Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
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