| No. |
Part Name |
Description |
Manufacturer |
| 181 |
ICS570BIT |
Multiplier and Zero Delay Buffer |
Integrated Circuit Systems |
| 182 |
INA210BIDCKR |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125 |
Texas Instruments |
| 183 |
INA210BIDCKT |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 6-SC70 -40 to 125 |
Texas Instruments |
| 184 |
INA210BIRSWR |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125 |
Texas Instruments |
| 185 |
INA210BIRSWT |
26-V, Bi-Directional, Zero-Drift, High Accuracy, Low-/High-Side, Voltage Out Current Shunt Monitor 10-UQFN -40 to 125 |
Texas Instruments |
| 186 |
INA220BIDGSR |
26-V, Bi-Directional, Zero-Drift, Low- or High-Side, I2C Out Current/Power Monitor 10-VSSOP -40 to 125 |
Texas Instruments |
| 187 |
INA220BIDGST |
26-V, Bi-Directional, Zero-Drift, Low- or High-Side, I2C Out Current/Power Monitor 10-VSSOP -40 to 125 |
Texas Instruments |
| 188 |
IS61LP12832-200BI |
128K x 32, 128K x 36 synchronous pipelined static RAM |
Integrated Silicon Solution Inc |
| 189 |
IS61LP12836-200BI |
128K x 32, 128K x 36 synchronous pipelined static RAM |
Integrated Silicon Solution Inc |
| 190 |
IS61LV12816-10BI |
10ns; 3.3V; 128K x 16 high-speed CMOS CMOS static RAM |
ICSI |
| 191 |
IS61LV12816-10BI |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 192 |
IS61LV12816L-10BI |
128K x 16 high-speed CMOS static RAM, 3.3V, 10ns |
Integrated Silicon Solution Inc |
| 193 |
IS61LV12824-10BI |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 194 |
IS61LV25616-10BI |
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Circuit Solution Inc |
| 195 |
IS61LV25616-10BI |
256K x 16 high speed asynchronous CMOS static RAM with 3.3v supply |
Integrated Silicon Solution Inc |
| 196 |
IS61LV25616AL-10BI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 197 |
IS61LV5128-10BI |
512K x 8 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 198 |
IS61LV5128AL-10BI |
512K x 8 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 199 |
IS61LV6416-10BI |
10ns; 3.3V; 64K x 16 high-speed CMOS static RAM |
ICSI |
| 200 |
IS61LV6416-10BI |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY |
Integrated Circuit Solution Inc |
| 201 |
IS61LV6416-10BI |
64K x 16 high-speed CMOS static RAM with 3.3V supply |
Integrated Silicon Solution Inc |
| 202 |
IS61LV6416-20BI |
64K x 16 high-speed CMOS static RAM with 3.3V supply |
Integrated Silicon Solution Inc |
| 203 |
IS61NF25632-10BI |
256K x 32 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 204 |
IS61NF25636-10BI |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 205 |
IS61NF51218-10BI |
512K x 18 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 206 |
IS61NLF25636-10BI |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 207 |
IS61NLF51218-10BI |
512K x 18 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 208 |
IS61SF12832-10BI |
10ns; 3.3V; 128K x 32, 128 x 36 synchronous flow-through static RAM |
ICSI |
| 209 |
IS61SF12836-10BI |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 210 |
IS61VPD10018-200BI |
1024K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
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