| No. |
Part Name |
Description |
Manufacturer |
| 181 |
MTW10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
| 182 |
MTW10N100E |
OBSOLETE - Power MOSFET 10 Amps, 1000 Volts |
ON Semiconductor |
| 183 |
MTW10N100E-D |
Power MOSFET 10 Amps, 1000 Volts N-Channel TO-247 |
ON Semiconductor |
| 184 |
MTY10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
| 185 |
NM27C210N120 |
1,048,576-Bit (64K x 16) High Performance CMOS EPROM [Life-time buy] |
Fairchild Semiconductor |
| 186 |
NM27C210N150 |
1,048,576-Bit (64K x 16) High Performance CMOS EPROM [Life-time buy] |
Fairchild Semiconductor |
| 187 |
OM10N100NK |
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 188 |
OM10N100NK |
N-channel size 6 MOSFET, high energy capability |
Omnirel |
| 189 |
PHD10N10E |
PowerMOS transistor |
Philips |
| 190 |
PHP10N10E |
PowerMOS transistor |
Philips |
| 191 |
RFM10N12 |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 192 |
RFM10N15 |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 193 |
RFM10N15L |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 194 |
RFP10N12 |
Trans MOSFET N-CH 120V 10A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 195 |
RFP10N15 |
10A/ 150V/ 0.300 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 196 |
RFP10N15 |
10A 150V 0.300 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 197 |
RSR010N10 |
4V Drive Nch MOSFET |
ROHM |
| 198 |
RSR010N10FHA |
4V Drive Nch MOSFET (Corresponds to AEC-Q101) |
ROHM |
| 199 |
RSR010N10FHATL |
4V Drive Nch MOSFET (Corresponds to AEC-Q101) |
ROHM |
| 200 |
RSR010N10TL |
4V Drive Nch MOSFET |
ROHM |
| 201 |
SF10N12 |
Silicon alloy-diffused junction thyristor 10A 1000V |
TOSHIBA |
| 202 |
SGH10N120RUF |
Short Circuit Rated IGBT |
Fairchild Semiconductor |
| 203 |
SGH10N120RUFD |
Short Circuit Rated IGBT |
Fairchild Semiconductor |
| 204 |
SGH10N120RUFDTU |
Discrete, Short Circuit Rated IGBT with Diode |
Fairchild Semiconductor |
| 205 |
SGH10N120RUFTU |
Discrete, Short Circuit Rated IGBT |
Fairchild Semiconductor |
| 206 |
SM5610N1 |
IC for quartz crystal oscillating module |
Nippon Precision Circuits Inc |
| 207 |
SM5610N1S |
IC for quartz crystal oscillating module |
Nippon Precision Circuits Inc |
| 208 |
SPB10N10 |
N-Channel SIPMOS Power Transistor |
Infineon |
| 209 |
SPB10N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, D�PAK, RDSon=180mOhm, 10A, NL |
Infineon |
| 210 |
SPB10N10L |
Power MOSFET, 100V, D²PAK, RDSon=154mOhm, 10A, LL |
Infineon |
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