| No. |
Part Name |
Description |
Manufacturer |
| 181 |
SSP10N60A |
600V N-Channel A-FET / Replaced by SSP10N60B |
Fairchild Semiconductor |
| 182 |
SSP10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 183 |
SSS10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 184 |
SSW10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 185 |
SSW10N60BTM |
600V N-Channel B-FET |
Fairchild Semiconductor |
| 186 |
STB10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 187 |
STB10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 188 |
STD10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 189 |
STF10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 190 |
STF10N62K3 |
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 191 |
STF10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 192 |
STF10N65K3(045Y) |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP narrow leads package |
ST Microelectronics |
| 193 |
STFI10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 194 |
STFI10N62K3 |
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 195 |
STFI10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 196 |
STGB10N60L |
N-CHANNEL 10A - 600V D 2 PAK LOGIC LEVEL IGBT |
SGS Thomson Microelectronics |
| 197 |
STGP10N60 |
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT |
ST Microelectronics |
| 198 |
STGP10N60L |
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT |
SGS Thomson Microelectronics |
| 199 |
STL10N60M2 |
N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT(TM) 5x6 HV package |
ST Microelectronics |
| 200 |
STP10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 201 |
STP10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 202 |
STU10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 203 |
T10N6 |
10 AMPS THYRISTOR 600V |
IPRS Baneasa |
| 204 |
TB10N6 |
10Aeff 600V TRIAC |
IPRS Baneasa |
| 205 |
TSM10N60CI |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
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