| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1S5110A |
Silicon power zener diode 10W 110V, ±5% tolerance |
Texas Instruments |
| 182 |
1S5110C |
Silicon power zener diode 10W 110V, double anode |
Texas Instruments |
| 183 |
1S5110R |
Silicon power zener diode 10W 110V, reverse polarity |
Texas Instruments |
| 184 |
1S6110 |
Silicon power zener diode 110V |
Texas Instruments |
| 185 |
1S6110A |
Silicon power zener diode 110V, ±5% tolerance |
Texas Instruments |
| 186 |
1S6110R |
Silicon power zener diode 110V, reverse polarity |
Texas Instruments |
| 187 |
1SMB110 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 110V. 600W peak power, 3.0W steady state. |
Motorola |
| 188 |
1SMB110A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 110V. 600W peak power, 3.0W steady state. |
Motorola |
| 189 |
1SMC110 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 110V. 1500W peak power, 5.0W steady state. |
Motorola |
| 190 |
1SMC110A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 110V. 1500W peak power, 5.0W steady state. |
Motorola |
| 191 |
2N5950 |
1.5 Watt hermetically sealed glass silicon zener diode 110V |
Motorola |
| 192 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
| 193 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
| 194 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
| 195 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
| 196 |
2N6496 |
Trans GP BJT NPN 110V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 197 |
2N6500 |
NPN transistor, 110V, 4A |
SemeLAB |
| 198 |
2SB1492 |
Trans Darlington PNP 110V 6A |
New Jersey Semiconductor |
| 199 |
3.0SMCJ110 |
3000W voltage supressor, 110V |
MEI |
| 200 |
3.0SMCJ110A |
3000W voltage supressor, 110V |
MEI |
| 201 |
30KP110 |
Diode TVS Single Uni-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 202 |
30KP110A |
Diode TVS Single Uni-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 203 |
30KP110C |
Diode TVS Single Bi-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 204 |
30KP110CA |
Diode TVS Single Bi-Dir 110V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 205 |
3KP110A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=110V, Tolerance=5% |
Comchip Technology |
| 206 |
3KP110A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=110V, Tolerance=5% |
Comchip Technology |
| 207 |
3KP110CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=110V, Tolerance=5% |
Comchip Technology |
| 208 |
3KP110CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=3000Watts, VRWM=110V, Tolerance=5% |
Comchip Technology |
| 209 |
3VR110 |
3 Watt Epoxy Silicon Zener Diode 110V |
Transitron Electronic |
| 210 |
5KP10 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:50-110V PEAK PULSE POWER: 5000W |
Shanghai Sunrise Electronics |
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