| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 182 |
2SA970 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 183 |
2SA971 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 184 |
2SC1940 |
Trans GP BJT NPN 120V 0.05A 3-Pin SP-8 |
New Jersey Semiconductor |
| 185 |
2SC2245 |
Trans GP BJT NPN 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 186 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
| 187 |
2SCR372P5 |
NPN 120V 700mA Medium Power Driver |
ROHM |
| 188 |
2SCR372P5T100 |
NPN 120V 700mA Medium Power Driver |
ROHM |
| 189 |
2SCR375P5 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
| 190 |
2SCR375P5T100 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
| 191 |
30KP120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 192 |
30KP120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 193 |
30KP120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 194 |
30KP120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 195 |
30KPA120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 196 |
30KPA120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 197 |
30KPA120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 198 |
30KPA120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 199 |
4DZ120 |
4W 120V Voltage Regulator Diode |
IPRS Baneasa |
| 200 |
50DZ120 |
50W 120V ZENER DIODE |
IPRS Baneasa |
| 201 |
5KP120 |
Diode TVS Single Uni-Dir 120V 5KW 2-Pin Case P600 |
New Jersey Semiconductor |
| 202 |
5KP120A |
Diode TVS Single Uni-Dir 120V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 203 |
5KP120C |
Diode TVS Single Bi-Dir 120V 5KW 2-Pin Case P600 |
New Jersey Semiconductor |
| 204 |
5KP120CA |
Diode TVS Single Bi-Dir 120V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 205 |
BD650 |
120V silicon NPN daelington power transistor |
Comset Semiconductors |
| 206 |
BD683 |
40.000W Darlington NPN Plastic Leaded Transistor. 120V Vceo, 4.000A Ic, 750 hFE. |
Continental Device India Limited |
| 207 |
BD683 |
Trans Darlington NPN 120V 4A 3-Pin TO-126 |
New Jersey Semiconductor |
| 208 |
BD684 |
40.000W Darlington PNP Plastic Leaded Transistor. 120V Vceo, 4.000A Ic, 750 hFE. |
Continental Device India Limited |
| 209 |
BD684 |
Trans Darlington PNP 120V 4A 3-Pin TO-126 |
New Jersey Semiconductor |
| 210 |
BD955 |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 5.000A Ic, 40 hFE. |
Continental Device India Limited |
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