No. |
Part Name |
Description |
Manufacturer |
181 |
2SK1365 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Switching Power Supply Applications |
TOSHIBA |
182 |
2SK3136 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
183 |
2SK3136 |
Transistors>Switching/MOSFETs |
Renesas |
184 |
2STF1360 |
Low voltage fast-switching NPN power transistors |
ST Microelectronics |
185 |
2STN1360 |
Low voltage fast-switching NPN power transistors |
ST Microelectronics |
186 |
2STX1360 |
Low voltage fast-switching NPN power transistors |
ST Microelectronics |
187 |
2STX1360-AP |
Low voltage fast-switching NPN power transistors |
ST Microelectronics |
188 |
307C1136 |
Motor Start Pellet |
Vishay |
189 |
307C1360 |
Fluorescent Lighting |
Vishay |
190 |
307C1361 |
Fluorescent Lighting |
Vishay |
191 |
307C1362 |
Fluorescent Lighting |
Vishay |
192 |
307C1363 |
Fluorescent Lighting |
Vishay |
193 |
307C1364 |
Fluorescent Lighting |
Vishay |
194 |
307C1365 |
Fluorescent Lighting |
Vishay |
195 |
307C1366 |
Fluorescent Lighting |
Vishay |
196 |
307C1367 |
Fluorescent Lighting |
Vishay |
197 |
3N136 |
Silicon PNP Transistor |
Motorola |
198 |
40290 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
199 |
40291 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
200 |
40292 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
201 |
40975 |
118-136MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers |
RCA Solid State |
202 |
40976 |
118-136MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers |
RCA Solid State |
203 |
40977 |
118-136MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers |
RCA Solid State |
204 |
54LS136 |
Quad 2-Input Exclusive-OR gate (With Open-Collector Outputs) |
Fairchild Semiconductor |
205 |
54LS136 |
Quad 2-Input Exclusive-OR gates with-open collector outputs |
IPRS Baneasa |
206 |
54LS136DMQB |
7 V, quat 2-input exclusive-OR gate with open-collector output |
National Semiconductor |
207 |
54LS136FMQB |
7 V, quat 2-input exclusive-OR gate with open-collector output |
National Semiconductor |
208 |
5KP100 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
209 |
5KP100C |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
210 |
6136 |
Radio Frequency Chokes |
JW Miller |
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