No. |
Part Name |
Description |
Manufacturer |
181 |
MSM514265C-60TS-K |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
182 |
MSM514265C-70JS |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
183 |
MSM514265C-70TS-K |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
184 |
MSM514265CSL |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
185 |
MSM514265CSL-50JS |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
186 |
MSM514265CSL-50TS-K |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
187 |
MSM514265CSL-60JS |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
188 |
MSM514265CSL-60TS-K |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
189 |
MSM514265CSL-70JS |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
190 |
MSM514265CSL-70TS-K |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
191 |
MSM514265E |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
192 |
MSM514265E-60TS-K |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
193 |
MSM514265E-70TS-K |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
194 |
MSM514265E60JS |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
195 |
MSM514265E70JS |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
196 |
ND411426 |
POW-R-BLOK Dual Diode Isolated Module (260 Amperes / Up to 2000 Volts) |
Powerex Power Semiconductors |
197 |
Q62702-F1426 |
NPN SILICON RF TRANSISTOR (FOR UHF/VHF FREQUENCY CONVERTERS AND LOCAL OSCILLATORS) |
Siemens |
198 |
RN1426 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
199 |
SI1426DH |
N-Channel 30-V (D-S) MOSFET |
Vishay |
200 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
201 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
202 |
TC1426 |
1.2A DUAL HIGH-SPEED MOSFET DRIVERS |
TelCom Semiconductor |
203 |
TC1426COA |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
204 |
TC1426COA |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
205 |
TC1426COA |
1.2A dual high-speed MOSFET driver. |
TelCom Semiconductor |
206 |
TC1426COA713 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
207 |
TC1426COA713 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
208 |
TC1426CPA |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
209 |
TC1426CPA |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ... |
Microchip |
210 |
TC1426CPA |
1.2A dual high-speed MOSFET driver. |
TelCom Semiconductor |
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