No. |
Part Name |
Description |
Manufacturer |
181 |
2SK1449 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
182 |
2SK2144 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
183 |
2SK2144 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
184 |
2SK2144 |
Transistors>Switching/MOSFETs |
Renesas |
185 |
300144 |
2 or 4 Resistors |
Vishay |
186 |
30144-23 |
Geode GXLV Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
187 |
30KP144A |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
188 |
30KP144CA |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
189 |
30KPA144 |
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
190 |
30KPA144 |
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
191 |
30KPA144A |
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
192 |
30KPA144A |
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
193 |
30KPA144Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
194 |
30KPA144C |
Diode TVS Single Bi-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
195 |
30KPA144C |
Diode TVS Single Bi-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
196 |
30KPA144CA |
Diode TVS Single Bi-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
197 |
30KPA144CA |
Diode TVS Single Bi-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
198 |
30KPA144CAe3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
199 |
30KPA144Ce3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
200 |
30KPA144e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
201 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
202 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
203 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
204 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
205 |
3SK0144 |
Silicon N-Channel 4-pin MOS FET |
Panasonic |
206 |
42051-144 |
5 A FIXED THREE TERMINAL NEGATIVE VOLTAGE REGULATORS |
Micropac Industries |
207 |
42144 |
RADIATION TOLERANT FULL BRIDGE POWER DRIVER HYBRID FOR 3-PHASE BRUSHLESS DC MOTORS |
Micropac Industries |
208 |
5962-9314401MUX |
192-Macrocell MAX® EPLD |
Cypress |
209 |
5962-9314401MZX |
128-Macrocell MAX® EPLD |
Cypress |
210 |
5962-9314402MUX |
192-Macrocell MAX® EPLD |
Cypress |
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