| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SK1446 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 182 |
2SK1446LS |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 183 |
2SK1447 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 184 |
2SK1447LS |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 185 |
2SK1448 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 186 |
2SK1449 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 187 |
2SK2144 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 188 |
2SK2144 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 189 |
2SK2144 |
Transistors>Switching/MOSFETs |
Renesas |
| 190 |
300144 |
2 or 4 Resistors |
Vishay |
| 191 |
30144-23 |
Geode GXLV Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
| 192 |
30KP144A |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 193 |
30KP144CA |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 194 |
30KPA144 |
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 195 |
30KPA144 |
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 196 |
30KPA144A |
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 197 |
30KPA144A |
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 198 |
30KPA144Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 199 |
30KPA144C |
Diode TVS Single Bi-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 200 |
30KPA144C |
Diode TVS Single Bi-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 201 |
30KPA144CA |
Diode TVS Single Bi-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 202 |
30KPA144CA |
Diode TVS Single Bi-Dir 144V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 203 |
30KPA144CAe3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 204 |
30KPA144Ce3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 205 |
30KPA144e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 206 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 207 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 208 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 209 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 210 |
3SK0144 |
Silicon N-Channel 4-pin MOS FET |
Panasonic |
| | | |
