| No. |
Part Name |
Description |
Manufacturer |
| 181 |
MAATSS0001 |
50-2500 MHz digital attenuaror, 5-bit, 15.5 dB |
MA-Com |
| 182 |
MAATSS0001 |
Digital Attenuator, 5 Bit, 15.5 dB, 500 - 2500 MHz |
Tyco Electronics |
| 183 |
MAATSS0001-TB |
50-2500 MHz digital attenuaror, 5-bit, 15.5 dB |
MA-Com |
| 184 |
MAATSS0001-TB |
Digital Attenuator, 5 Bit, 15.5 dB, 500 - 2500 MHz |
Tyco Electronics |
| 185 |
MAATSS0001TR |
50-2500 MHz digital attenuaror, 5-bit, 15.5 dB |
MA-Com |
| 186 |
MAATSS0001TR |
Digital Attenuator, 5 Bit, 15.5 dB, 500 - 2500 MHz |
Tyco Electronics |
| 187 |
NTE5075A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 16V. Zener test current Izt = 15.5mA. |
NTE Electronics |
| 188 |
PT6311 |
15.5V 2A Wide-Input Adjustable Step-Down ISR |
Texas Instruments |
| 189 |
PT6311N |
15.5V 2A Wide-Input Adjustable Step-Down ISR |
Texas Instruments |
| 190 |
QPB2318 |
15.5 dB, 5 MHz - 210 MHz, DOCSIS 3.1 Reverse Amplifier |
Qorvo |
| 191 |
QPM2239 |
13 - 15.5 GHz 80 W GaN Power Amplifier Module |
Qorvo |
| 192 |
STF17N62K3 |
N-channel 620 V, 0.28 Ohm, 15.5 A, TO-220FP SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 193 |
STF19NM65N |
N-channel 650 V, 0.25 Ohm, 15.5 A, MDmesh(TM) 2 Power MOSFET in a TO-220FP package |
ST Microelectronics |
| 194 |
STP17N62K3 |
N-channel 620 V, 0.28 Ohm, 15.5 A, TO-220 SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 195 |
STW17N62K3 |
N-channel 620 V, 0.28 Ohm, 15.5 A, TO-247 SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 196 |
TGA2239 |
13 - 15.5 GHz, 35 Watt GaN Power Amplifier |
Qorvo |
| 197 |
TGA2239-CP |
13.4 - 15.5 GHz, 50 Watt GaN Power Amplifier |
Qorvo |
| 198 |
TGA2527-SM |
12.5 - 15.5 GHz Ku Band Power Amplifier |
Qorvo |
| 199 |
TGA2533-SM |
12.5 - 15.5 GHz Ku Band Power Amplifier |
Qorvo |
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