| No. |
Part Name |
Description |
Manufacturer |
| 181 |
IS41LV16100S-60TI |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
| 182 |
IS42S16100 |
512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM |
Integrated Silicon Solution Inc |
| 183 |
IS42S16100-10T |
512K words x 16 bits x 2 banks(16-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 184 |
IS42S16100-6T |
512K words x 16 bits x 2 banks(16-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 185 |
IS42S16100-7T |
512K words x 16 bits x 2 banks(16-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 186 |
IS42S16100-8T |
512K words x 16 bits x 2 banks(16-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 187 |
IS42S16100C1 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 188 |
IS42S16100C1-5T |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 189 |
IS42S16100C1-5TL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 190 |
IS42S16100C1-6T |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 191 |
IS42S16100C1-6TL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 192 |
IS42S16100C1-7T |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 193 |
IS42S16100C1-7TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 194 |
IS42S16100C1-7TL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 195 |
IS42S16100C1-7TLI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 196 |
ISR16100C |
Schottky Diode |
Rectron Semiconductor |
| 197 |
KM6161002A |
CMOS SRAM |
Samsung Electronic |
| 198 |
KM6161002B |
CMOS SRAM |
Samsung Electronic |
| 199 |
KM6161002C |
CMOS SRAM |
Samsung Electronic |
| 200 |
MBR16100 |
100 V, Schottky die |
MEMT Micro-Electro-Magnetical Tech Co. |
| 201 |
MBR16100 |
Schottky Rectifier |
Microsemi |
| 202 |
MBR16100 |
Diode Schottky 100V 16A 2-Pin(2+Tab) TO-220AC |
New Jersey Semiconductor |
| 203 |
MBR16100 |
Rectifier: Schottky |
Taiwan Semiconductor |
| 204 |
MBR16100CT |
SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| 205 |
MBR16100CT |
Schottky Rectifier |
Microsemi |
| 206 |
MBR16100CT |
16A 100V Schottky Rectifier |
ON Semiconductor |
| 207 |
MBR16100CT-D |
SWITCHMODE Power Rectifier |
ON Semiconductor |
| 208 |
MBR16100FCT |
SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| 209 |
MBRF16100 |
Rectifier: Schottky |
Taiwan Semiconductor |
| 210 |
MBRS16100 |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| | | |
