| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SB1698 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 182 |
2SB1699 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 183 |
2SC1169 |
SILICON NPN EPITAXIAL PLANAR TYPE |
TOSHIBA |
| 184 |
2SC3169 |
Si NPN Triple Diffused Planar |
Panasonic |
| 185 |
2SC3169 |
Silicon NPN Power Transistors TO-220Fa package |
Savantic |
| 186 |
2SC4169 |
NPN Epitaxial Planar Silicon Transistor Driver Applications |
SANYO |
| 187 |
2SC5169 |
DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 188 |
2SD1169 |
Si NPN triple diffused planar darlington. Medium speed power switching. |
Panasonic |
| 189 |
2SD1169 |
SI NPN TRIPLE DIFFUSED PLANAR DARLINGTON |
Unknow |
| 190 |
2SD1691 |
NPN SILICON POWER TRANSISTOR |
NEC |
| 191 |
2SD1691 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 192 |
2SD1692 |
NPN SILICON DARLINGTON TRANSISTOR |
NEC |
| 193 |
2SD1693 |
Silicon transistor |
NEC |
| 194 |
2SD1694 |
NPN SILICON POWER TRANSISTOR |
NEC |
| 195 |
2SD1695 |
Silicon transistor |
NEC |
| 196 |
2SD1697 |
NPN Silicon Transistor |
NEC |
| 197 |
2SD1698 |
NPN SILICON TRANSISTOR |
NEC |
| 198 |
2SD1699 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 199 |
2SD1699-T1 |
Silicon transistor |
NEC |
| 200 |
2SD1699-T2 |
Silicon transistor |
NEC |
| 201 |
2SK1169 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 202 |
2SK1169 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 203 |
2SK1169 |
Transistors>Switching/MOSFETs |
Renesas |
| 204 |
2SK1690 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 205 |
2SK1691 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 206 |
2SK1692 |
2SK1692 |
Unknow |
| 207 |
2SK1692 |
2SK1692 |
Unknow |
| 208 |
2SK1693 |
VX SERIES POWER MOSFET |
NEC |
| 209 |
2SK1697 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 210 |
2SK1697 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| | | |
