No. |
Part Name |
Description |
Manufacturer |
181 |
KM416C1204CJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
182 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
183 |
KM416C1204CJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
184 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
185 |
KM416C1204CJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
186 |
KM416C1204CJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
187 |
KM416C1204CJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
188 |
KM416C1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
189 |
KM416C1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
190 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
191 |
KM416C1204CT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
192 |
KM416C1204CT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
193 |
KM416C1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
194 |
KM416C1204CT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
195 |
KM416C1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
196 |
KM416C1204CT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
197 |
KM416C1204CT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
198 |
KM416C1204CT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
199 |
KM416C1204CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
200 |
KM416C1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
201 |
KM416C1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
202 |
LHF16C17 |
16M Flash Memory 2M (bb8) |
SHARP |
203 |
M34116C1 |
PCM CONFERENCE CALL AND TONE GENERATION CIRCUIT |
SGS Thomson Microelectronics |
204 |
M34116C1 |
PCM CONFERENCE CALL AND TONE GENERATION CIRCUIT |
ST Microelectronics |
205 |
M58LR016C100ZC6T |
16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
206 |
M58LR016C100ZC6T |
16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory |
ST Microelectronics |
207 |
M58LR016C120ZC6T |
16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
208 |
M58LR016C120ZC6T |
16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory |
ST Microelectronics |
209 |
M59DR016C100ZB1T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
210 |
M59DR016C100ZB1T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
ST Microelectronics |
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