No. |
Part Name |
Description |
Manufacturer |
181 |
KM416V1204CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
182 |
KM416V1204CT-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
183 |
KM416V1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
184 |
KM416V1204CT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
185 |
KM416V1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
186 |
KM416V1204CT-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
187 |
KM416V1204CT-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
188 |
KM416V1204CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
189 |
KM416V1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
190 |
KM416V1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
191 |
STEVAL-CBL016V1 |
Single LNB supply and control IC DiSEqC 1.X compliant with EXTM based on the LNBH29 in a QFN16 (4x4) |
ST Microelectronics |
192 |
STEVAL-CCA016V1 |
Filter-free stereo 2.8 W Class-D audio power amplifier demo board with selectable 3D sound effects based on the TS4999 |
ST Microelectronics |
193 |
STEVAL-IPE016V1 |
Single-phase energy metering demonstration board with one current transformer and one shunt resistor based on the STPM10 |
ST Microelectronics |
194 |
STEVAL-ISA116V1 |
5 W, 2-output wide-range buck converter based on the VIPER26LD |
ST Microelectronics |
195 |
STEVAL-MKI116V1 |
MEMS microphone demonstration board based on the MP34DB01 and STM32 |
ST Microelectronics |
196 |
STEVAL-TDR016V1 |
30 W, 155 - 165 MHz evaluation board based on PD55015-E |
ST Microelectronics |
197 |
WED9LC6416V1310BC |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
198 |
WED9LC6416V1310BI |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
199 |
WED9LC6416V1312BC |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
200 |
WED9LC6416V1312BI |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
201 |
WED9LC6416V1510BC |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
202 |
WED9LC6416V1510BI |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
203 |
WED9LC6416V1512BC |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
204 |
WED9LC6416V1512BI |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
205 |
WED9LC6416V1610BC |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
206 |
WED9LC6416V1610BI |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
207 |
WED9LC6416V1612BC |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
208 |
WED9LC6416V1612BI |
128Kx32 SSRAM/4Mx32 SDRAM |
White Electronic Designs |
209 |
WED9LC6816V1310BC |
256K X 32 SSRAM/ 4M X 32 SDRAM |
White Electronic Designs |
210 |
WED9LC6816V1310BI |
256K X 32 SSRAM/ 4M X 32 SDRAM |
White Electronic Designs |
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