No. |
Part Name |
Description |
Manufacturer |
181 |
2N4118A |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
182 |
2N4118A |
N-Channel JFET General Purpose Amplifier |
Intersil |
183 |
2N4118A |
Ultra High Input Impedance N-Channel JFET Amplifier |
Linear Systems |
184 |
2N4118A |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
185 |
2N4118A |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
186 |
2N4118A |
Ultra Low Leakage, N-Channel JFETs |
Vishay |
187 |
2N6318A |
Trans GP BJT PNP 80V 7A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
188 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
189 |
2N718A |
Silicon NPN Transistor |
Motorola |
190 |
2N718A |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
191 |
2N718A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
192 |
2N718A |
0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
193 |
2N718A |
NPN Small Signal General Purpose Amplifiers |
Fairchild Semiconductor |
194 |
2N718A |
NPN Transistor |
Microsemi |
195 |
2N718A |
Transistor |
SGS-ATES |
196 |
2N918ACSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
197 |
2SB1018A |
Silicon PNP Power Transistors TO-220F package |
Savantic |
198 |
2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
199 |
2SB1218A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
200 |
2SB1418A |
Power Device - Power Transistors - Others |
Panasonic |
201 |
2SC1318A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
202 |
2SC4518A |
Silicon NPN Transistor |
Sanken |
203 |
2SC4518A |
Silicon NPN Power Transistors TO-220F package |
Savantic |
204 |
2SD1819 |
Transistor - Silicon NPN Epitaxial Planar Type - For general amplification - Complementary pair with 2SB1218 and 2SB1218A |
Panasonic |
205 |
2SK0818A |
Silicon N-channel Power F-MOS FET |
Panasonic |
206 |
2SK1280 |
N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W) |
Fuji Electric |
207 |
2SK18A |
Silicon N-Channel junction dual Field Effect Transistor |
TOSHIBA |
208 |
2Z18A |
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS |
TOSHIBA |
209 |
3.0SMCJ18A |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
Diodes |
210 |
3.0SMCJ18A |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 to 220 Volts 3000 Watt Peak Power Pulse) |
Panjit International Inc |
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