| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1SS362 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 182 |
1SS362FV |
Switching diode |
TOSHIBA |
| 183 |
1SS364 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 184 |
1SS365 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 185 |
1SS366 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 186 |
1SS367 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 187 |
1SS368 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
TOSHIBA |
| 188 |
1SS369 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) |
TOSHIBA |
| 189 |
1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage, High Speed Switching Applications |
TOSHIBA |
| 190 |
1SS372 |
SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| 191 |
1SS372 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 192 |
1SS373 |
DIODE (HIGH SPEED SWITCHING APPLICATION) |
TOSHIBA |
| 193 |
1SS374 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 194 |
1SS375 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
| 195 |
1SS376 |
Switching diode |
ROHM |
| 196 |
1SS377 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 197 |
1SS378 |
Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 198 |
1SS379 |
Diode Silicon Epitaxial Planar Type General Purpose Rectifier Applications |
TOSHIBA |
| 199 |
1SS380 |
Diodes > Switching Diodes > Surface mounting type |
ROHM |
| 200 |
1SS380TE-17 |
Switching Diode |
ROHM |
| 201 |
1SS380TF |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 202 |
1SS380TFTE-17 |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 203 |
1SS381 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 204 |
1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 205 |
1SS383 |
40V Dual Schottky Diode |
ON Semiconductor |
| 206 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 207 |
1SS383T1G |
40V Dual Schottky Diode |
ON Semiconductor |
| 208 |
1SS383T2G |
40V Dual Schottky Diode |
ON Semiconductor |
| 209 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 210 |
1SS385 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| | | |
