No. |
Part Name |
Description |
Manufacturer |
181 |
FS1VS-18A |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
182 |
GM71VS17403CJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns |
Hynix Semiconductor |
183 |
GM71VS17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
184 |
GM71VS17403CJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns |
Hynix Semiconductor |
185 |
GM71VS17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
186 |
GM71VS17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
187 |
GM71VS17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
188 |
GM71VS17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power |
Hynix Semiconductor |
189 |
GM71VS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
190 |
GM71VS17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power |
Hynix Semiconductor |
191 |
GM71VS17403CT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns |
Hynix Semiconductor |
192 |
GM71VS17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
193 |
GM71VS17403CT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns |
Hynix Semiconductor |
194 |
GM71VS18163CJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
195 |
GM71VS18163CJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
196 |
GM71VS18163CJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
197 |
GM71VS18163CLJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
198 |
GM71VS18163CLJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
199 |
GM71VS18163CLJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
200 |
HY51VS17403HG |
4M x 4Bit EDO DRAM |
Hynix Semiconductor |
201 |
HY51VS17403HGJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
202 |
HY51VS17403HGJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
203 |
HY51VS17403HGJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
204 |
HY51VS17403HGLJ-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
205 |
HY51VS17403HGLJ-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
206 |
HY51VS17403HGLJ-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
207 |
HY51VS17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
208 |
HY51VS17403HGLT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power |
Hynix Semiconductor |
209 |
HY51VS17403HGLT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power |
Hynix Semiconductor |
210 |
HY51VS17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
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