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Datasheets for 2,7

Datasheets found :: 605
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No. Part Name Description Manufacturer
181 NMC27C32BQE200 32,768-Bit (4096 x 8) CMOS EPROM National Semiconductor
182 NMC27C32BQE250 250 ns, Vcc=5V+/-10%, 32,768-bit (4k x 8) high speed version UV erasable CMOS PROM National Semiconductor
183 SY23256 32,768 x 8 Static Read Only Memory Synertek
184 SY23256A 32,768 x 8 Static Read Only Memory Synertek
185 SYM23256 Military 32,768 x 8 Static Read Only Memory Synertek
186 SYM23256A Military 32,768 x 8 Static Read Only Memory Synertek
187 TC51832F-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
188 TC51832F-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
189 TC51832F-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
190 TC51832FL-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
191 TC51832FL-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
192 TC51832FL-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
193 TC51832P-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
194 TC51832P-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
195 TC51832P-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
196 TC51832PL-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
197 TC51832PL-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
198 TC51832PL-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
199 TC51832SP-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
200 TC51832SP-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
201 TC51832SP-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
202 TC51832SPL-10 100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
203 TC51832SPL-12 120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
204 TC51832SPL-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
205 TC55257BFL SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
206 TC55257BFL-10 SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
207 TC55257BFL-10L SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
208 TC55257BFL-85 SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
209 TC55257BFL-85L SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
210 TC55257BFTL SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA


Datasheets found :: 605
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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